Process for the thickness growth of colloidal nanosheets and materials composed of said nanosheets

ABSTRACT

A process of growth in the thickness of at least one facet of a colloidal inorganic sheet, by sheet is meant a structure having at least one dimension, the thickness, of nanometric size and lateral dimensions great compared to the thickness, typically more than 5 times the thickness. The process allows the deposition of at least one monolayer of atoms on at least one inorganic colloidal sheet, this monolayer being constituted of atoms of the type of those contained or not in the sheet. Homostructured and heterostructured materials resulting from such process as well as the applications of the materials are also described. By homostructured is meant a material of homogeneous composition in the thickness and by heterostructured is meant a material of heterogeneous composition in the thickness.

FIELD OF INVENTION

The present invention relates to a process for growing in the thickness at least one face of an inorganic colloidal nanosheet. The invention also relates to the homostructured or heterostructured materials resulting of said process as well as the applications of said materials. By nanosheet is meant a structure having at least one dimension, the thickness, of nanometric size and lateral dimensions that are great compared to the thickness, typically more than 5 times the thickness. By homostructured is meant a material of homogeneous composition in the thickness and by heterostructured is meant a material of heterogeneous composition in the thickness.

The present invention relates in particular to a process allowing the deposition of at least one monolayer of atoms on at least one inorganic colloidal nanosheet, said monolayer being constituted of atoms that are identical or not to the atoms contained in said nanosheet.

STATE OF THE ART

The fabrication of structures having at least one nanometric dimension induces the appearance of new physical properties. These structures have characteristics that may significantly differ from those of the bulk material of the same chemical composition.

These small dimensions (at the nanometric scale) indeed lead to a modification of the electronic¹, optic², magnetic³ or plasmonic⁴ properties.

These new materials thus generate a growing interest in fields as diverse as optics, imaging, electronics or catalysis.

The various existing nanostructures can be classified depending on the number of nanometric-size dimensions they present. Thus, an isotropic nanocrystal is a nanometric structure in the three dimensions, while a nanowire is a nanometric structure in two dimensions.

The present invention relates to nanometric structures in one dimension, i.e. nanosheets, which we shall subsequently call either sheets or nanosheets. It relates more particularly to colloidal nanosheets, i.e. the nanosheets that can be dispersed in solution. The present invention relates to the further growth of nanosheets, i.e. the growth in the thickness of an initial nanosheet.

The synthesis of colloidal inorganic nanosheets has experienced strong growth since the early 2000s. It is possible to distinguish several types of syntheses, each associated with a set of different materials. The main existing approaches, which will be detailed in the following, are direct exfoliation of a lamellar material, chemical synthesis of monosheets of lamellar materials, growth of nanosheets by poisoning (which blocks the growth) some crystalline facets with ligands, and finally a passage by an intermediate compound of lamellar structure undergoing a topotactic transformation.

Direct exfoliation is commonly used to produce nanosheets of graphene, hydroxides or oxydes⁵ (e.g. TiO₂). The method of preparation generally consists in reducing the interaction energy between the nanosheets in order to mechanically separate them thereafter. In the case of ionic compounds one induces a swelling of the inter-sheets space (generally containing positive ions) by exchanging the cations with a highly hindered ion such as tetrabutylammonium hydroxide⁶. This swelling weakens the interaction between the nanosheets which can then be separated mechanically by sonication for example. In the case of graphite, the reduction of the inter-sheets interaction energy may be achieved by the use of a suitable solvent such as N-methylpyrrolidone⁷. This type of process always results in the production of mono-sheets a few Angstroms thick. No further growth is possible. The size of the nanosheets depends on the size of the exfoliated bulk object. A control of the thickness of the nanosheet is not feasible, said thickness being fixed by the lamellar structure of the starting compound and therefore by its chemical nature.

There are also many direct syntheses of mono-sheets. It is for example possible to grow graphene directly on a copper substrate. It is also possible by synthetic methods in solution to directly prepare monosheets of GeS or GeSe⁸ or even multiple sheets of Bi₂Te₃ ⁹. These syntheses, however, do not allow a control of the thickness of the nanosheets or their growth in the thickness.

A much more versatile approach allowing the fabrication of nanosheets in a wide variety of different materials is the poisoning of some crystalline facets by suitable surface ligands. The preferential adsorption of molecules on some crystalline facets of the material of interest blocks the growth in the perpendicular direction to these facets and thus induces a highly anisotropic crystalline growth^(10,11). It should be noted that the poisoning molecule can be of very varied nature: surfactants¹², polymers¹³, thiols¹⁴, amines^(15,16,17), inorganic ions¹⁸. Materials so synthesized can be for example:

-   -   nanosheets of metals (PVP^(13,19,20), CTAB²¹, ions^(18,22))     -   nanosheets of rare earths oxides^(17,23) (oleic acid and/or         oleylamine)     -   nanosheets of sulfides (Cu₂S in the presence of thiols¹⁴)

This manufacturing method, although very general, still has some limitations and in particular does not allow further growth in the thickness of an initial nanosheet.

Another approach consists in synthesizing nanosheets taking advantage of the formation of an intermediate that is also lamellar. This approach can be used to produce nanosheets of metal (Cobalt, Nickel or Copper²⁴) or oxides (magnesium oxide MgO²⁵) through a lamellar hydroxide. Similarly, many lamellar chalcogenides are obtained by prior formation of a metal-(primary amine) complex of lamellar structure which further reacts with a sulfur or selenium precursor. It is thus possible to form nanosheets of CdSe²⁶ of CdMnSe²⁷, of ZnS²⁸⁻³¹, or of In₂S₃ ³². It should be noted that a lamellar lead-thioruea complex also allows the formation of nanosheets of PbS³³. This alternative approach has allowed for the first time to obtain chalcogenides nanosheets whose thickness is defined at the atomic monolayer. Thus, since 2001, synthesis protocols for making hybrid organic/inorganic lamellar semiconductor materials have appeared³⁴. The elemental nanosheet of these materials is constituted by a semiconducting monolayer or bilayer (ZnS³⁵ for example), in wurtzite structure, of [1, 1, 0] zone axis, whose surface is stabilized by a primary amine. This very general synthesis protocol can be applied to a variety of materials: CdSe, CdS, ZnS, ZnSe, ZnTe . . . . This approach was partially amended in 2006 in order to obtain individual CdSe nanosheets simply by varying the length of the alkyl chain of the primary amine^(26,36). Control of the thickness of such nanosheets remains limited and their thickness does not exceed 5 monolayers. Consequently, the optical properties of these nanosheets are very limited: fluorescence circumscribed in the blue and ultraviolet regions of the visible spectrum, full width at half maximum of the fluorescence peak greater than 12 nm. In addition, further growth in the thickness remains impossible on these nanosheets.

More recently, in 2008, a new approach that significantly improves the control of the thickness of the synthesized semiconductor nanosheets was developed³⁷⁻³⁹. In this case, the nanosheets comprise a semiconductor nanosheet (CdSe, CdS or CdTe) of zinc-blende structure, of [0, 0, 1] zone axis having a cationic layer stabilized by carboxylates on each side of the nanosheet. This type of synthesis allows controlling precisely the thickness of the semiconductor nanosheet, which can be between 4 and 11 monolayers depending on the synthesis protocol used. Such colloidal semiconductor nanosheets have innovative electronic and optical properties, in particular because of their perfectly controlled thickness. Thus, the fluorescence of these objects is characterized by a very narrow emission spectrum (less than 10 nm full width at half maximum) and the accessible wavelengths in fluorescence cover the entire visible spectrum. However, this new approach does not allow further growth in the thickness of an initial nanosheet.

Thus, current methods allow synthesizing nanosheets whose thickness is not always well controlled.

Currently there are also two types of methods of growth in solution of films of semiconductors on an initial material: processes of growth on colloidal nanocrystals and processes of growth on substrate.

In the case of growth processes on colloidal nanocrystals such as “quantum dots” (semiconductor nanocrystals), known growth processes involve an excess of ligands and high temperatures (over 200° C.)⁴⁹⁻⁴². Under such conditions, it is very difficult to ensure the stability of the nanosheets. Indeed, because of their 2D structure, the nanosheets degrade and dissolve when these growth processes are used.

In the case of growth processes on a substrate, the known methods are carried out in aqueous solution and at ambient temperature. We distinguish the CBD: “Chemical Bath Deposition” growth in chemical bath⁴³ and the SILAR: “Successive Ion Layer Adsorption and Reaction” growth by adsorption and subsequent reaction of ionic layers⁴⁴. These processes, in order to be applied to nanosheets, require a set of conditions that are difficult to meet, for example prior modification of the surface ligands of the nanosheets, a precise control of the pH or the absence of chelating agents (chelating agents that could lead to a dissolution of the nanosheets). The stability in solution of the inorganic semiconductor nanosheets is due to the presence of organic ligands and their interaction with the crystalline material. Changing these interactions by heating or removal of ligands causes aggregation or destruction of the nanosheets by dissolution or change in shape to a more stable thermodynamic structure.

Thus, growth in the thickness of these objects seemed difficult to achieve with known techniques described above.

None of the methods described above allows producing an inorganic particle comprising an initial nanosheet. However, this final material has numerous advantages: it is possible to cover all or part of the initial nanosheet by one or more layers of the same or different material from the material constituting the initial nanosheet, which allows obtaining a final material with very interesting properties, in terms of stability or optical properties.

The object of the present invention is therefore to provide a novel method for the further growth in the thickness of an initial nanosheet through deposition of at least one monolayer of inorganic material on said initial nanosheet.

The present invention therefore allows obtaining inorganic particles comprising an inorganic nanosheet partially or completely covered with at least one monolayer of inorganic material.

SUMMARY

An object of the present invention is an inorganic colloidal particle comprising an initial inorganic nanosheet partially or completely covered with at least one monolayer of inorganic material.

In one embodiment, said particle has a thickness of 0.5 nm to 10 mm.

In one embodiment, the lateral dimensions of said particle are at least 1.5 times its thickness.

In one embodiment, the material of the initial nanosheet of said particle comprises a material MxEy, wherein

-   -   M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc,         Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al,         Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd,         Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture thereof,     -   E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof,

and x and y are independently a decimal number from 0 to 5, and not simultaneously equal to 0.

In one embodiment, the initial nanosheet is totally or partially covered with one monolayer of material M or E, wherein

-   -   M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc,         Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al,         Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd,         Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture thereof, and     -   E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof.

In one embodiment, the initial nanosheet is totally or partially covered with at least two monolayers, where the monolayers are alternatively composed of M then E or conversely,

-   -   wherein M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os,         Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr,         Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce,         Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture         thereof, and     -   E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof.

Another object of the invention is a process of growth in the thickness of a inorganic colloidal nanosheet by deposition of at least an element R on at least one face of at least one inorganic colloidal nanosheet, the process comprising the following steps:

-   -   (1) putting in contact at least one inorganic nanosheet with a         precursor of the element R to deposit, this precursor being at a         positive degree of oxidation if the nanosheet has a negative         surface charge and at a negative degree of oxidation if the         nanosheet has a positive surface charge.     -   (2) waiting for a time t that the precursor of R has reacted         with the atoms at the surface of one or several nanosheets.

In one embodiment, the precursor of the element R is a precursor of M or E depending on the composition of the initial nanosheet.

In one embodiment, we implement the two previous steps (1) and (2) n time where n is an integer greater or equal to 1.

In one embodiment, we change successively the element R at each implementation of the process according to the composition of the previous monolayer.

In one embodiment, we deposit at the surface of at least one initial nanosheet a cationic monolayer (M) then an anionic monolayer (E) or conversely, thereby forming a bilayer consisting of MxEy composed by the elements M and E.

In one embodiment, at least one initial nanosheet can be fixed on a substrate.

Another object of the invention is the use of said aforementioned nanoparticles or nanoparticles obtained by the process described above, as fluorescent agents, catalysis agents, absorbing and/or collecting elements of a photovoltaic cell or field effect transistor.

Another object of the invention is a luminescent or electroluminescent system or an amplifying stage of a laser comprising at least one aforementioned particle or a particle obtained by the process described above.

Another object of the invention is a catalyst comprising at least one aforementioned particle or a particle obtained by the process described above.

Another object of the invention is a photovoltaic cell comprising at least one aforementioned particle or a particle obtained by the process described above.

Another object of the invention is a transistor comprising at least one aforementioned particle or a particle obtained by the process described above.

DETAILED DESCRIPTION

For the purposes of the present invention, the terms sheets and nanosheets are equivalent. A nanosheet presents a quasi-2D crystalline structure whose at least one dimension, preferably the thickness, is less than 1 μm. The lateral dimensions, i.e. the width and the length, of the nanosheet are great compared to the thickness, i.e. at least 1.5 times greater. The nanosheet is anisotropic.

The increase in the initial nanosheet thickness allows significantly extending the spectral characteristics of said sheet such as emission or absorption spectra. It therefore seems desirable to develop a method of growth in the thickness to reach greater thicknesses. Furthermore, it would be desirable for many applications to be able to deposit on the initial nanosheet a material different from the one composing the nanosheet.

Thus, the final particles increased in their thickness according to the invention present new or improved properties compared to initial nanosheets, such as high quantum yield, increased stability, better surface stability, low fluorescence full width at half maximum (less than 30 nm, preferably less than 25 nm), a fast fluorescence lifetime (less than 40 ns, preferably less than 10 ns) a high absorption cross section (approximately or more than 10⁻¹³ cm² at 400 nm), possible tuning of the emission wavelength, robustness through time of the optical properties, a high specific surface.

The present invention therefore relates to a final particle or object comprising an initial nanosheet where at least a part of the particle has a thickness greater than the thickness of the initial nanosheet.

The present invention therefore relates to a final particle or object comprising an initial nanosheet partially or completely covered with at least one layer of additional material.

The present invention therefore relates to a final particle or object comprising an initial nanosheet partially or completely covered on a least one facet by at least one layer of additional material.

For the purpose of the present invention, the term “layer” refers to a film or a continuous or partial layer being at least one atom thick. The term “monolayer” refers to a film or a continuous or partial layer being one atom thick. The atoms composing the layer or the monolayer can be identical or different.

In one embodiment, at least one part of the final particle or object has a thickness greater than the thickness of the initial nanosheet.

In one embodiment, the final particle or object comprises the initial nanosheet totally covered with at least one layer of material.

In one embodiment, the final particle or object comprises the initial nanosheet totally covered with a first monolayer of material, said first monolayer being partially or completely covered with at least a second monolayer of material.

In one embodiment, the initial nanosheet has a thickness of 0.3 nm to less than 500 nm, of 5 nm to less than 250 nm, of 0.3 nm to less than 100 nm, of 0.3 nm to less than 50 nm, of 0.3 nm to less than 25 nm, of 0.3 nm to less than 20 nm, of 0.3 nm to less than 15 nm, of 0.3 nm to less than 10 nm, of 0.3 nm to less than 5 nm.

In one embodiment, at least one of the lateral dimensions (length or width) of the initial nanosheet is at least 1.5 times the thickness of the initial nanosheet, at least 2 times the thickness of the initial nanosheet, at least 2.5 times the thickness of the initial nanosheet, at least 3 times the thickness of the initial nanosheet, at least 3.5 times the thickness of the initial nanosheet, at least 4 times the thickness of the initial nanosheet, at least 4.5 times the thickness of the initial nanosheet, at least 5 times the thickness of the initial nanosheet.

In one embodiment, the lateral dimensions of the initial nanosheet are at least 0.45 nm to at least 2500 nm.

In one embodiment, at least one of the lateral dimensions of the initial nanosheet is from 2 nm to 1 m, from 2 nm to 100 mm, from 2 nm to 10 mm, from 2 nm to 1 mm, from 2 nm to 100 μm, from 2 nm to 10 μm, from 2 nm to 1 μm, from 2 nm to 100 nm, from 2 nm to 10 nm.

In one embodiment, the material composing the initial nanosheet comprises a material MxEy, wherein

M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture thereof,

E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof,

and x and y are independently a decimal number from 0 to 5, and not simultaneously equal to 0.

In one embodiment, the semiconducting material composing the initial nanosheet comprises a compound of group II-VI, of group II-V, of group III-VI, of group III-V, of group IV-VI, of group I-III-VI, of group II-IV-VI or of group II-IV-V or a mixture thereof.

In one embodiment, the material composing the initial nanosheet comprises at least one semiconductor chosen among CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, HgO, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, GeS₂, GeSe₂, SnS₂, SnSe₂, CuInS₂, CuInSe₂, AgInS₂, AgInSe₂, CuS, Cu₂S, Ag₂S, Ag₂Se, Ag₂Te FeS, FeS₂ InP, Cd₃P₂, Zn₃P₂, CdO, ZnO, FeO, Fe₂O₃, Fe₃O₄, Al₂O₃, TiO₂, MgO, MgS, MgSe, MgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, or a mixture thereof.

In one embodiment, the material composing the initial nanosheet comprises at least one metal chosen among Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, or a mixture thereof.

In one embodiment, the material composing the initial nanosheet comprises at least one semiconductor chosen preferably among CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, PbS, PbSe, PbTe, CuInS₂, CuInSe₂, AgInS₂, AgInSe₂, CuS, Cu₂S, Ag₂S, Ag₂Se, Ag₂Te, FeS, FeS₂, PdS, Pd₄S, WS₂.

In one embodiment, the final particle or object has a thickness of 0.5 nm to 10 mm, of 0.5 nm to 1 mm, of 0.5 nm to 100 μm, of 0.5 nm to 10 μm, of 0.5 nm to 1 μm, of 0.5 nm to 500 nm, of 0.5 nm to 250 nm, of 0.5 nm to 100 nm, of 0.5 nm to 50 nm, of 0.5 nm to 25 nm, of 0.5 nm to 20 nm, of 0.5 nm to 15 nm, of 0.5 nm to 10 nm, of 0.5 nm to 5 nm.

In one embodiment, at least one of the lateral dimensions (length or width) of the final particle or object represents at least 1.5 times the thickness of the final particle or object, at least 2 times the thickness of the final particle or object, at least 2.5 times the thickness of the final particle or object, at least 3 times the thickness of the final particle or object, at least 3.5 times the thickness of the final particle or object, at least 4 times the thickness of the final particle or object, at least 4.5 times the thickness of the final particle or object, at least 5 times the thickness of the final particle or object.

In one embodiment, the lateral dimensions of the final particle or object are at least 0.75 nm to at least 50 mm.

In one embodiment, at least one of the lateral dimensions of the final particle or object is 2 nm to 1 m, 2 nm to 100 mm, 2 nm to 10 mm, 2 nm to 1 mm, 2 nm to 100 μm, 2 nm to 10 μm, 2 nm to 1 μm, 2 nm to 100 nm, 2 nm to 10 nm.

In one embodiment, the final particle or object is homostructured, i.e. the initial nanosheet and the at least one monolayer are composed of the same material.

In one embodiment, the final particle or object is heterostructured, i.e. the initial nanosheet and the at least one monolayer are composed of at least two different materials.

In one embodiment where several monolayers recover all or part of the initial nanosheet, these monolayers can be composed of the same material or composed of different materials.

In one embodiment where several monolayers cover all or part of the initial nanosheet, these monolayers can be composed such as to form a gradient of materials.

In one embodiment, the final particle or object can comprise the initial nanosheet and at least one monolayer covering all or part of the initial nanosheet, said monolayer being composed of the same material as the initial nanosheet or a different material than the initial nanosheet.

In one embodiment, the final particle or object can comprise the initial nanosheet and 1, 2, 3, 4, 5 or more monolayers covering all or part of the initial nanosheet, said monolayers begin of same composition as the initial nanosheet or being of different composition than the initial nanosheet or being of different composition one another.

In one embodiment, the final particle or object can comprise the initial nanosheet and at least 2, 3, 4, 5 or more monolayers in which the first deposited monolayer covers all or part of the initial nanosheet and the at least second deposited monolayer covers all or part of the previously deposited monolayer, said monolayers being of same composition as the initial nanosheet or being of different composition than the initial nanosheet and possibly of different compositions one another.

Therefore in one embodiment, the final particle or object comprises the initial nanosheet completely covered with at least one continuous monolayer then completely or partially covered with at least another monolayer, said monolayers being of same composition as the initial nanosheet or being of different composition than the initial nanosheet and possibly being of different compositions one another.

In one embodiment, the final particle or object has a core/shell structure, i.e. an initial nanosheet of given composition covered on its entire surface by at least one monolayer of different composition than the initial nanosheet.

Therefore, the obtained material is composed of a pilling of films where at least one is of identical or different chemical composition than the initial nanosheet, the surface of each film completely covering the surface of the film on which it is deposited.

In one embodiment, the final particle or object has a dewetted structure, i.e. an initial nanosheet of given composition partially covered with at least one monolayer of the same or different composition than the initial nanosheet.

Therefore, the obtained material is composed of a pilling of films where at least one is of the same or different chemical composition than the initial nanosheet, the surface of each film partially covering the surface of the films on which it is deposited.

In one embodiment, the material composing the at least one monolayer comprises a material M or E wherein

M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture thereof,

E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof,

In one embodiment, the material composing the at least one monolayer comprises at least one metal chosen among Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, or a mixture thereof.

In one embodiment where the final particle or object comprises at least one layer, i.e. at least 2 monolayers (2 monolayers being also defined as a bilayer), said layer comprises a compound of group II-VI, of group II-V, of group III-VI, of group III-V, of group IV-VI, of group I-III-VI, of group II-IV-VI or of group II-IV-V or a mixture thereof.

In one embodiment where the final particle or object comprises at least one layer, i.e. at least 2 monolayers (2 monolayers being also defined as a bilayer), said layer comprises at least one semiconductor chosen among CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, HgO, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, GeS₂, GeSe₂, SnS₂, SnSe₂, CuInS₂, CuInSe₂, AgInS₂, AgInSe₂, CuS, Cu₂S, Ag₂S, Ag₂Se, Ag₂Te FeS, FeS₂ InP, Cd₃P₂, Zn₃P₂, CdO, ZnO, FeO, Fe₂O₃, Fe₃O₄, Al₂O₃, TiO₂, MgO, MgS, MgSe, MgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, or a mixture thereof.

In one embodiment, the material composing the at least one layer comprises at least one semiconductor chosen preferably among CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, PbS, PbSe, PbTe, CuInS₂, CuInSe₂, AgInS₂, AgInSe₂, CuS, Cu₂S, Ag₂S, Ag₂Se, Ag₂Te, FeS, FeS₂, PdS, Pd₄S, WS₂.

In one embodiment, the initial nanosheet is an inorganic colloidal nanosheet.

In one embodiment, the initial nanosheet is crystalline.

In one embodiment, the final particle or object is a nanosheet.

In one embodiment, the final particle or object is inorganic.

In one embodiment, the final particle or object is colloidal.

In one embodiment, the final particle or object is crystalline.

In one embodiment, the initial nanosheet comprised in the final particle or object has preserved its quasi-2D structure.

In one embodiment, the material covering the initial nanosheet is inorganic.

The present invention relates to a process of growth in the thickness by deposition of at least an element R on at least one face of at least one inorganic colloidal nanosheet, the process comprising the following steps:

-   -   putting in contact at least one inorganic nanosheet with a         precursor of the element R to be deposited, this precursor being         at a positive degree of oxidation if the nanosheet has a         negative surface charge and at a negative degree of oxidation if         the nanosheet has a positive surface charge.     -   waiting for a time t that the precursor of R has reacted with         the atoms at the surface of one or several nanosheets.     -   Optionally, we remove after the reaction the excess of         precursor.

In one embodiment, the material composing the initial nanosheet comprises a material MxEy, wherein

M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture thereof,

E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof,

and x and y are independently a decimal number from 0 to 5, and not simultaneously equal to 0.

In one embodiment, the semiconducting material composing the initial nanosheet comprises a compound of group II-VI, of group II-V, of group III-VI, of group III-V, of group IV-VI, of group I-III-VI, of group II-IV-VI or of group II-IV-V or a mixture thereof.

In one embodiment, the material composing the initial nanosheet comprises at least one semiconductor chosen among CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, HgO, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, GeS₂, GeSe₂, SnS₂, SnSe₂, CuInS₂, CuInSe₂, AgInS₂, AgInSe₂, CuS, Cu₂S, Ag₂S, Ag₂Se, Ag₂Te FeS, FeS₂ InP, Cd₃P₂, Zn₃P₂, CdO, ZnO, FeO, Fe₂O₃, Fe₃O₄, Al₂O₃, TiO₂, MgO, MgS, MgSe, MgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, or a mixture thereof.

In one embodiment, the material composing the initial nanosheet comprises at least one metal chosen among Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, or a mixture thereof.

In one embodiment, the material composing the initial nanosheet comprises at least one semiconductor chosen preferably among CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, PbS, PbSe, PbTe, CuInS₂, CuInSe₂, AgInS₂, AgInSe₂, CuS, Cu₂S, Ag₂S, Ag₂Se, Ag₂Te, FeS, FeS₂, PdS, Pd₄S, WS₂.

In one embodiment, the precursor of the element R to be deposited is introduced in an amount at least sufficient to be in stoichiometric proportions with the surface atoms of one or several nanosheets.

In one embodiment, the precursor of the element R to be deposited is introduced in sub-stoichiometric amount (to partially cover the initial nanosheet or the previous layer).

In one embodiment, we implement the two, or optionally the three, steps of the above process n time where n is an integer greater or equal to 1.

In one embodiment, the element R successively implemented above may be of a different composition.

In one embodiment where we implement one time (n=1) the two, or optionally the three, steps of the process as described above, the element R is either M or E and the precursor of the element R is respectively either a precursor of M or a precursor of E, depending on the composition of the initial nanosheet,

wherein M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture thereof, E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof.

In one embodiment where we implement several times (n>1) the two, or optionally the three, steps of the process as described above, the element R deposited first is either M or E, the element R deposited in second is E if the first element R deposited is M or M if the first element R deposited is E, and so on.

In one embodiment where we implement several times (n>1) the two, or optionally the three, steps of the process as described above, we alternate systematically the deposition of a monolayer of M and a monolayer of E or conversely.

Therefore, in one embodiment where we implement two times (n=2) the two, or optionally the three, steps of the process as described above, a bilayer M₁E₁ or E₁M₁ is formed on the initial nanosheet.

In one embodiment where we implement three times (n=3) the two, or optionally the three, steps of the process as described above, a bilayer M₁E₁ or E₁M₁ is formed on the initial nanosheet then a monolayer E₂ or M₂, said E₂ or M₂ being identical or different in composition than E₁ or M₁.

In one embodiment where we implement four times (n=4) the two, or optionally the three, steps of the process as described above, a bilayer M₁E₁ or E₁M₁ is formed on the initial nanosheet then a bilayer M₂E₂ or E₂M₂ respectively, said E₂ or M₂ being identical or different in composition than E₁ or M₁.

Therefore, in one embodiment we implement n time the two, or optionally the three, steps of the process as described above,

when n is odd:

-   -   the initial nanosheet is covered with (n−1)/2 bilayer(s) all ME         or all EM then a monolayer M or E respectively, the element M         and E can be in the same or different composition.         when n is even:     -   the initial nanosheet is recovered by n/2 bilayer(s) ME or EM,         the element M and E can be in the same or different composition.

In one embodiment, the bilayers ME or EM formed correspond to a compound of group II-VI, of group II-V, of group III-VI, of group III-V, of group IV-VI, of group I-III-VI, of group II-IV-VI or of group II-IV-V or a mixture thereof.

In one embodiment, the bilayers ME or EM formed correspond to at least one semiconductor chosen among CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgSe, HgTe, HgO, GeS, GeSe, GeTe, SnS, SnSe, SnTe, PbS, PbSe, PbTe, GeS₂, GeSe₂, SnS₂, SnSe₂, CuInS₂, CuInSe₂, AgInS₂, AgInSe₂, CuS, Cu₂S, Ag₂S, Ag₂Se, Ag₂Te FeS, FeS₂ InP, Cd₃P₂, Zn₃P₂, CdO, ZnO, FeO, Fe₂O₃, Fe₃O₄, Al₂O₃, TiO₂, MgO, MgS, MgSe, MgTe, AlN, AlP, AlAs, AlSb, GaN, GaP, GaAs, GaSb, InN, InP, InAs, InSb, TlN, TlP, TlAs, TlSb, or a mixture thereof.

In one embodiment, the material of the at least one monolayer M comprises at least one metal selected from Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, or a mixture thereof.

In one embodiment, the material of the at least one monolayer E comprises at least one material selected from O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof.

In one embodiment, the bilayers ME or EM formed correspond to at least one semiconductor preferably selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, PbS, PbSe, PbTe, CuInS₂, CuInSe₂, AgInS₂, AgInSe₂, CuS, Cu₂S, Ag₂S, Ag₂Se, Ag₂Te, FeS, FeS₂, PdS, Pd₄S, WS₂.

In one embodiment, we deposit on the surface of at least one inorganic colloidal nanosheet a cationic monolayer (M) then a anionic monolayer (E) or conversely, thereby forming a bilayer consisting of MxEy composed by the element M and E in stoichiometric ratio, the stoichiometric ratio being characterized by the x and y values corresponding to the absolute value of the oxidation states of elements E and M respectively.

In one embodiment, the above deposition sequence is repeated m time where m is an integer at least equal to 1 which forms a film of composition MxEy.

In one embodiment, the reaction time of the precursor R is less than few hours, preferably less than 24 hours, or less than 12 hours, or less than 6 hours, or less than 4 hours, or less than 2 hours, or less than 1 hour.

In one embodiment, the reaction time t of the precursor R is between one millisecond and one minute.

In one embodiment, the film deposited is an alloy of the aforementioned materials.

In one embodiment, the film deposited of composition MxEy is a chalcogenide.

In one embodiment, the film deposited of composition MxEy is a phosphide.

In one embodiment, the film deposited of composition MxEy is an oxide.

In one embodiment, the film deposited comprises a transition metal or a lanthanide in minor quantities (doping).

In one embodiment, the film deposited comprises in minor quantities an element inducing an excess or a defect of electrons compared to the sole film (electronic doping).

In one embodiment, one or several initial nanosheets can be fixed on at least one substrate.

In one embodiment, the fixation of one or several initial nanosheets on the at least one substrate is done by adsorption or by chemical coupling.

In one embodiment, said substrate is chosen among silica SiO₂, aluminum oxide Al₂O₃, indium-tin oxide ITO, fluorine-doped tin oxide FTO, titanium oxide TiO₂, gold, silver, nickel, molybdenum, aluminum, silicium, germanium, silicon carbide SiC, graphene and cellulose.

In one embodiment, said substrate comprises a polymer.

In one embodiment, the initial nanosheet is dispersed in a dispersing solvent.

In one embodiment, the dispersion medium is an organic medium, preferably apolar or weakly polar.

In one embodiment, the dispersing solvent of the nanosheets is chosen among distilled water, methanol, ethanol, isopropanol, butanol, chloroform, acetone, hexane, tetrahydrofuran, dimethylsulfoxide, toluene, octadecene and dimethylformamide.

In one embodiment, the dispersing solvent of the nanosheets is a supercritical fluid.

In one embodiment, the dispersing solvent of the nanosheets is an ionic liquid.

In one embodiment, a stabilizing compound capable of stabilizing the final particle(s)s or object(s) can be introduced in the dispersing solvent.

In one embodiment, the stabilizing compound of the final particles or objects comprises an organic ligand.

In one embodiment, the organic ligand comprises a carboxylic acid, a thiol, an amine, a phosphine, an amide, an ester, a pyridine, an imidazole, an alcohol.

In one embodiment, the stabilizing compound of the final particles or objects is an ion.

In one embodiment, the stabilizing ion comprises a quaternary ammonium.

In one embodiment, the temperature of the reaction medium is set between 100° C. and 350° C.

In one embodiment, the temperature of the reaction medium is −80° C. to 150° C., 20° C. to 100° C., 40° C. to 80° C., approximately 60° C. (60° C.±5° C.).

In one embodiment, the temperature of the reaction medium is ambient temperature.

In one embodiment, an annealing process is performed in order to decrease the surface's roughness of the final particle or object.

In one embodiment, the excess of precursors is discarded after reaction

In one embodiment, the nanosheets obtained after the reaction of the precursor R thereon are purified.

In one embodiment, the purification is done by flocculation and/or precipitation.

In one embodiment, the purification is done by filtration.

In one embodiment, if R is a chalcogenide, the precursor of R is a compound containing the chalcogenide at the −2 oxidation state.

In one embodiment, if R is sulfur, the precursor of R is a salt containing S²⁻ sulfide ions.

In one embodiment, the precursor of R comprises bis(trimethylsilyl) sulfide (TMS₂S) or hydrogen sulfide (H₂S) or sodium hydrogen sulfide (NaSH) or sodium sulfide (Na₂S) or ammonium sulfide (S(NH₄)₂) or thioruea or thioacetamide.

In one embodiment, if R is selenium, the precursor of R comprises a salt containing Se²⁻ selenide ions.

In one embodiment, the precursor of R comprises bis(trimethylsilyl) selenide (TMS₂Se) or hydrogen selenide (H₂Se) or sodium selenide (Na₂Se) or sodium hydrogen selenide (NaSeH) or sodium selenosulfate (Na₂SeSO₃) or selenourea.

In one embodiment, if R comprises tellurium, the precursor of R is a salt containing Te²⁻ telluride ions.

In one embodiment, the precursor of R is bis(trimethylsilyl) telluride (TMS₂Te) or hydrogen telluride (H₂Te) or sodium telluride (Na₂Te) or sodium hydrogen telluride (NaTeH) or sodium tellurosulfate (Na₂TeSO₃).

In one embodiment, if R is a chalcogenide, the precursor of R is formed in situ by reaction of a reducing agent with a compound containing R at the 0 oxidation state or at a strictly positive oxidation state.

In one embodiment, if R is a metal, the precursor of R is a compound containing the metal at positive or 0 oxidation state.

In one embodiment, if R is a metal, the precursor of R comprises a metallic salt.

In one embodiment, the metallic salt is a carboxylate of R, or a chloride of R, or a nitrate of R, or a sulfate of R, or a thiolate of R.

In one embodiment, if R is oxygen, the precursor of R is the hydroxide ion (HO⁻).

In one embodiment, if R is oxygen the precursor of R is a solution of sodium hydroxide (NaOH) or of potassium hydroxide (KOH) or of tetramethylammonium hydroxide (TMAOH).

In one embodiment, if E is phosphorus, the precursor of E comprises phosphorus at the −3 oxidation state.

In one embodiment, the precursor of E comprises tris(trimethylsilyl) phosphine (TMS₃P) or phosphine (PH₃) or white phosphorus (P₄) or phosphorus trichloride (PCl₃).

In one embodiment, a reducing agent can be introduced at the same time as the precursor(s) of the film to be deposited.

In one embodiment, the reducing agent comprises a hydride.

In one embodiment, the reducing agent comprises dihydrogen.

In one embodiment, the hydride comprises sodium tetrahydroborate (NaBH₄); sodium hydride (NaH), lithium tetrahydroaluminate (LiAlH₄), diisobutylaluminum hydride (DIBALH).

The present invention also relates to the use of the final particles or objects described above.

Indeed, these final particles or objects further grown in the thickness have numerous advantages and properties such as high quantum yield, better stability, better surface stability, narrow full width at half maximum (less than 30 nm, preferably less than 25 nm), fast fluorescence lifetime (less than 40 ns, preferably less than 10 ns), a high absorption cross-section (approximately or more than 10⁻¹³ cm² at 400 nm), a possible tuning of the emission wavelength, a robustness through time of the optical properties, a high specific surface.

These different properties make the final particles or objects such as described above useful objects for applications in fluorescence, especially in luminescent or electroluminescent systems or the amplification stage of a laser.

As an example, CdSe nanosheets covered with a CdS or a CdZnS shell as described in the examples have a high quantum yield that can be over 60% as well as a narrow fluorescence full width at half maximum (less than 20 nm). Other examples of final particles or objects useful for applications in fluorescence are CdS nanosheets covered with ZnS (CdS/ZnS), CdSe_(x)S_(1-x) being a decimal number from 0 to 1) covered with Cd_(y)Zn_(1-y)S (y being a decimal number from 0 to 1) (CdSeS/CdZnS), CdTe nanosheets covered with Cd_(y)Zn_(1-y)Se_(x)S_(1-x) (x and y being decimal number independently from 0 to 1) (CdTe/CdZnSeS), CdS nanosheets covered with manganese(II) or copper(II)-doped ZnS CdS/ZnS:Mn or CdS/ZnS:Cu.

These final particles or objects such as described above are also useful as catalysts because of their high specific surface, their better stability, their great absorption cross-section.

CdS, ZnS and alloys thereof nanosheets and CdSe nanosheets can for example be covered with platinum and/or palladium sulfide. The obtained composite has a photocatalytic dihydrogen production activity. Other examples of final particles or objects useful in catalytic applications are CdS or CdSe nanosheets covered with TiO₂, CdSe or CdS nanosheets covered with a metallic layer such as Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf.

These final particles or objects such as described above are also very useful as an absorbing and/or collecting element of a photovoltaic cell because of their better stability, enhanced electron/hole mobility and high absorption cross section.

As an example, CdSe nanosheets with big dimensions (more than 100 nm of lateral extension) can be covered with a doped shell (CdZnS doped with Ag⁺ for example). This allows increasing the electronic mobility of the absorbing and collecting elements of a solar cell containing such final object: CdSe/CdTe, CdTe/CdSe, PbSe/PbS, ZnS/InP, CuInS2/ZnS, CdS/CuInS₂.

These final particles or objects such as described above are also very useful as field effect transistor due to their better stability, enhanced electron/hole mobility and a high density of charge carriers.

As an example, CdSe nanosheets with big dimensions (more than 100 nm of lateral extension) can be covered with a doped shell (CdZnS doped with Ag⁺ for example). This allows enhancing the electronic mobility in the final objects. Equally, a low band gap semiconducting sheet covered with a high band gap semiconductor shell allows obtaining a high mobility while keeping an excitonic structure. PbS nanosheets covered with a layer of CdS is an example of final particles or objects useful for field effect transistor applications.

Another aspect of the invention relates to a luminescent system, an electroluminescent system, or an amplifying stage of a laser, a high specific surface and crystallinity catalyst of controlled surface, an absorbing and/or collecting element of a photovoltaic cell or a field effect transistor comprising an element obtained according to a process described according to one embodiment of the invention.

Other characteristics and advantages of the process according to the invention will appear after reading the detailed description and the examples given after as purely illustrative means.

BRIEF DESCRIPTION OF THE FIGURES

FIG. 1 shows a functional block diagram of steps of a method of growth in thickness according to an embodiment of the invention.

FIG. 2 shows the crystal structure of a CdSe sheet seen in sectional view according to one embodiment of the invention.

FIG. 3 shows the schematic structure of a heterostructured nanosheet seen in sectional view according to one embodiment of the invention.

FIG. 4 shows the schematic structure of a heterostructured nanosheet obtained by growth after immobilization on a substrate seen in sectional view according to one embodiment of the invention.

EXAMPLES

The present invention will be better understood on reading the following examples illustrating non-exhaustively the invention.

Initial Sheets:

The initial nanosheets on which a process of growth in the thickness according to at least one embodiment of the invention is particularly efficient are the nanosheets having a surface charge. This surface charge can be positive or negative depending on the nature of the initial nanosheet considered. The semiconducting nanosheets such as described above (for example CdSe, CdS or CdTe) belong to this class of materials and will be taken as non-limitative examples of initial nanosheets. Such a sheet whose structure is schematized in FIG. 2 has a zinc-blende structure, a [0, 0, 1] zone axis and has a cationic surface stabilized by carboxylates on each facet of the sheet. These facets are perfectly polar (in this case cationic).

CdSe nanosheets for example can be obtained by any method known, such as described for example in the following documents: Ithurria, S.; Dubertret, B. Journal of the American Chemical Society 2008, 130, 16504-5 and Ithurria, S.; Bousquet, G.; Dubertret, B. Journal of the American Chemical Society 2011, 133, 3070-7. 174 mg of Cd(myristate)₂ and 12 mg of selenium are introduced in a three-necked round-bottomed flask containing 16 ml, of 1-octadecene (ODE, 90%). The flask is degassed under reduced pressure and stirring at room temperature for 30 minutes. Argon is introduced in the flask which is then heated. When the temperature reaches 200° C., 40 mg of Cd(acetate)₂(H₂O)₂ are rapidly introduced in the reaction medium inducing the growth of the nanosheets. The reaction mixture is heated at 240° C., temperature at which it is held for approximately 10 minutes in order to ensure the growth of the sheets. The solution is then cooled down and washed by successive precipitation/suspension. The first precipitation is done by addition of a non-solvent: ethanol (80 mL approximately) and centrifugation (5000 rpms for 10 minutes). The supernatant is discarded and the pellet is suspended in hexane (10 mL approximately). The sheets' solution still contains a lot of Cd(myristate)₂ in excess. Adding a few milliliters of octylamine (4 mL) allows its dissolution. The suspension of nanoplatelets is then precipitated a second time by addition of ethanol (80 mL) and centrifugation. The suspension/precipitation process is repeated twice more with octylamine and one last time simply by suspension in hexane and precipitation with ethanol. The final precipitate is suspended in 10 mL of chloroform (CHCl₃). The as-obtained sheets have the structure schematized in FIG. 2 which shows the crystalline structure of a CdSe sheet seen in sectional view.

Deposition of a Film of Chalcogenides on the Sheets

The colloidal CdSe/CdS sheets, according to at least one embodiment of the invention, are prepared by a layer-by-layer deposition of CdS on initial CdSe sheets.

The process ‘steps used are summarized in the block diagram presented in FIG. 1.

In a first embodiment of the invention the sulfur precursor comprises bis(trimethylsilyl) sulfide (TMS₂S). 2 mL of the CdSe sheets solution in chloroform are placed under magnetic stirring in a glove box under inert atmosphere (E101). 100 μL of bis(trimethylsilyl) sulfide (TMS₂S) are then injected into the solution containing the sheets (E103), inducing a color change and a rapid aggregation. The mixture is allowed to react for one hour at room temperature (E104). The solution is then centrifuged, the supernatant removed and the pellet washed twice with ethanol. The sheets making up the precipitate (E105) are thicker than the initial sheets, they present an additional monolayer of sulfur on each side of the initial CdSe. The precipitate (E105) is then dispersed in a few milliliters of hexane to which 10 mg of Cd(Acetate)₂(H₂O)₂ powder (E101) are added (E103). Under stirring, there is another color change, the reaction is allowed to proceed for one hour (E104). 200 μL of oleic acid are then added, the solution becomes clear. The final sheets (E106) are then precipitated with ethanol and suspended in hexane. This process allows the deposition of a monolayer of CdS layers on each side of the CdSe sheets.

In the second embodiment of the invention, the sulfur precursor comprises hydrogen sulfide H₂S. 2 ml of the CdSe sheets solution in CHCl₃ (E101) are placed under magnetic stirring in a glove box. 2 mmol of H₂S (48 mL) (E102) are bubbled (E103) in the solution. It changes color and becomes turbid immediately (E104). Aggregated sheets are precipitated by centrifugation, the supernatant is discarded and the precipitate is dispersed in hexane (E105). 10 mg of Cd(Acetate)₂(H₂O)₂ (E102) are added (E103), and cause a new change of color (E104). After one hour, 200 μL of oleic acid are added and the solution becomes clear, sign of the disaggregation of the sheets. The final sheets (E106) are then precipitated in ethanol, centrifuged and suspended in hexane. This process allows the deposition of a CdS monolayer on each side of the CdSe sheets.

In a third embodiment of the invention the sulfur precursor comprises ammonium sulfide. 2 mL of the CdSe sheets solution in CHCl₃ (E101) and 2 mL of aqueous tetramethylammonium hydroxide solution (100 mg/mL) were introduced into a vial. 100 μL of an aqueous solution of ammonium sulfide (20%, E102) are rapidly injected into the biphasic mixture (E103). The color of the organic phase containing the sheets changes immediately (E104). Under stirring, the sheets then transfer in a few minutes in the upper aqueous phase. The addition of 10 mL of ethanol breaks the biphasic mixture and induces aggregation of the sheets which are then precipitated by centrifugation. The supernatant is removed and the sheets suspended in distilled water (E105). 20 mg of Cd(Acetate)₂(H₂O)_(2 (E)102) were added to the solution (E103), which causes an immediate change in color followed by the aggregation of sheets (E104). The final sheets (E106) are precipitated by centrifugation and dispersed in hexane using 200 μL oleic acid. This process allows the deposition of a CdS monolayer on each side of the CdSe sheets.

The iteration of the process described in any of the embodiments above allows the deposit of additional layers. The final structure of the sheets obtained is shown schematically in FIG. 3, where A0 is the CdSe and A1 is the CdS. Replacement of Cd(Acetate)₂(H₂O)₂ by Zn(Acetate)₂(H₂O)₂ allows the deposition of a ZnS monolayer on the CdSe sheets.

Same processes can be used to deposit selenide or telluride instead of sulfide. In this case the precursor used may be the selenium or tellurium analog precursors than the one used above.

Deposition of a Film of Oxides on the Sheets.

One describes for example the deposition of a film of zinc oxide ZnO, according to one embodiment of the invention, on the initial CdSe sheets. 2 mL of the solution of CdSe sheets in CHCl₃ (E101) are introduced in a vial. 100 μL of a tetramethylammonium hydroxide solution (E102) in methanol are injected (E103). The color of the solution changes immediately from yellow to red and the sheets aggregate strongly (E104). The sheets (E105) are then precipitated by centrifugation and washed twice with ethanol. The sheets (E105) are then dispersed in chloroform and 10 mg of Zn(stearate)₂ (E101) are added. After 10 minutes of sonication (E104), the final sheets (E106) are precipitated with ethanol and dispersed in chloroform. The process allows the deposition of a ZnO monolayer on each side of the CdSe sheets. The final structure of the as-obtained sheets is schematized in FIG. 3, where A0 is CdSe, and A1 is ZnO.

Deposition of a Metallic Film

One describes for example the deposition of gold, according to one embodiment of the invention, on the initial CdSe nanosheets. These sheets have a positive surface charge and it is first of all necessary to invert it. This inversion is done by deposition of a monolayer of sulfur at the surface of the sheets.

2 mL of the solution of CdSe sheets in CHCl₃ (E101) as well as 100 μL of a solution of tetramethylammonium sulfide (1 M) in ethanol are introduced in a vial. Under stirring, the color of the solution containing the sheets changes immediately and the sheets aggregate. After 10 minutes of reaction, the sheets are precipitated by centrifugation. The supernatant is discarded and the sheets are washed twice with ethanol. The sheets are suspended in distilled water.

One then adds dropwise (E103) in the solution of sheets a solution of HAuCl₄ (E102) at 0.1 M. The color of the solution changes progressively due to the deposition of gold at the sheets' surface (E104). The final sheets (E106) are washed twice by precipitation with ethanol. The final structure of the as-obtained sheets is schematized in FIG. 3 where A0 is CdSe, and A1 is gold (Au).

According to another embodiment of the invention, one describes for example the deposition of a gold layer on initial nanosheets.

In a vial are successively added 2 mL of chloroform, 400 μL of the solution of CdSe sheets, 20 mg of thioacetamide (TAA) as well as 200 μL of octylamine. The solution is submitted to sonication for 5 minutes, which causes the complete dissolution of TAA as well as a color change from yellow to orange. The sheets are then aggregated by addition of a few drops of ethanol and the solution is centrifuged for 5 minutes at 5000 rpms. The supernatant containing the unreacted precursors is discarded and the pellet containing the sheets is dispersed in 2 mL of toluene. 2 mL of a solution of gold precursors and ligands prepared by dissolution in 10 mL of toluene of 10 mg of AuCl₃, 80 mg of didodecyldimethylammonium bromide as well as 120 mg of dodecylamine are added. The mixture is left reacting for 15 minutes. The resulting core/shell objects are precipitated by centrifugation for 5 minutes at 5000 rpms, the supernatant is discarded and the pellet dispersed in 2 mL of toluene.

Deposition of an Alloyed Film

One describes for example the deposition, according to one embodiment of the invention, of an alloy of cadmium sulfide and zinc sulfide CdZnS on the initial CdSe nanosheet.

2 mL of a CdSe sheets solution in chloroform (E101) is placed under magnetic stirring in a glove box under inert atmosphere. 100 μL of bis(trimethylsilyl) sulfide (TMS₂S) (E102) are then injected (E103), inducing a color change and a rapid aggregation. The mixture is allowed to react for one hour at room temperature (E104). The solution is then centrifuged, the supernatant discarded and the precipitate washed twice with ethanol. It is then dispersed in few milliliters of hexane (E105). A 5 mg of Cd(Acetate)₂(H₂O)₂ and 3.5 mg of Zn(Acetate)₂ solution (E102) dissolved in 1 mL of ethanol is added drop wise over 10 minutes (E103). A new color change is observed, the reaction is allows to proceed under stirring for one hour (E104). 200 μL of oleic acid are then added, the solution becomes clear. The final sheets (E106) are then precipitated with ethanol and suspended in hexane. The process allows the deposit of a Cd_(0.5)Zn_(0.5)S monolayer on each side of CdSe sheets. The iteration of the process allows the deposition of additional layers. The final structure of the sheets obtained is shown schematically in FIG. 3, where A0 is the CdSe and A1 is the CdZnS.

Deposition of a Doped Film

One describes for example the deposition of a film of zinc sulfide doped with manganese on the initial CdSe sheets according to one embodiment of the invention.

2 mL of a CdS sheets solution in chloroform (E101) is placed in a vial under magnetic stirring in a glove box under inert atmosphere. 100 μL of bis(trimethylsilyl) sulfide (TMS₂S, E102) are then injected (E103), inducing a rapid aggregation. The mixture is allowed to react for one hour at room temperature (E104). The solution is then centrifuged, the supernatant discarded and the pellet washed twice with ethanol. It is then dispersed in few milliliters of hexane (E105). 1 mL of a Zn(Acetate)₂ and Mn(Acetate)₂ solution (1% molar in Mn) in ethanol (E102) is added drop wise over 10 minutes (E103). The reaction is allowed to proceed under stirring for one hour (E104). 200 μL of oleic acid are then added, the solution becomes clear. The final sheets (E106) are then precipitated with ethanol and suspended in hexane. The process allows the deposit of a manganese-doped ZnS monolayer on each side of CdS sheets. The iteration of the process allows the deposition of additional layers.

Successive Deposition of Several Films of Different Chemical Composition

One describes for example the deposition of a film of cadmium sulfide then of zinc sulfide on the initial CdSe nanosheets according to one embodiment of the invention. 2 mL of a CdSe sheets solution in chloroform (E101) is placed under magnetic stirring in a glove box under inert atmosphere. 100 μL of bis(trimethylsilyl) sulfide (TMS₂S, E102) are then injected (E103), inducing a color change and a rapid aggregation. The mixture is allowed to react for one hour at room temperature (E104). The solution is then centrifuged, the supernatant discarded and the precipitate washed twice with ethanol. This (E105) is then dispersed in few milliliters of hexane to which 10 mg of Cd(Acetate)₂(H₂O)₂ (E102) powder are added (E103). Under stirring, a new color change is observed, the reaction is allowed to proceed for one hour (E104). 200 μL of oleic acid are then added, the solution becomes clear. The sheets are then precipitated with ethanol and suspended in 2 mL of chloroform. We now have sheets covered with a CdS monolayer (E105). This solution is placed again under magnetic stirring in a glove box under inert atmosphere. 100 μL of bis(trimethylsilyl) sulfide (TMS₂S, E102) are then injected (E103), inducing a color change and a rapid aggregation. The mixture is allowed to react for one hour at room temperature (E104). The solution is then centrifuged, the supernatant discarded and the pellet washed twice with ethanol. This (E105) is then dispersed in few milliliters of hexane to which 10 mg of Zn(Acetate)₂ (E102) powder are added (E103). Under stirring, a new color change is observed. The reaction is allowed to proceed for one hour (E104). 200 μL of oleic acid are then added, the solution becomes clear. The final sheets (E106) are then precipitated with ethanol and suspended in hexane. The final structure of the sheets obtained is shown schematically in FIG. 3, where A0 is the CdSe, A1 is the CdS and A2 is the ZnS.

Immobilization of Sheets on a Substrate then Growth:

In one embodiment of the invention, a microscope glass slide (26 mm by 26 mm) is cleaned with an oxygen plasma. It is then functionalized with 3-mercaptopropyl-triethoxysilane by immersion for 10 minutes in a 1% in volume solution of 3-mercaptopropyl-triethoxysilane in ethanol. The glass slide is rinsed 3 times with ethanol then dried. It is then immersed for 1 h in a solution of CdSe sheets dispersed in chloroform. The sheets adsorb at the surface of the glass slide and form a monolayer of sheets. The slide is rinsed twice with chloroform in order to eliminate sheets that are not bound to the substrate.

One then deposits a monolayer of sulfur on the surface of sheets absorbed on the glass plate. The slide covered with sheets (E101) is placed in a glove box under inert atmosphere and immersed in chloroform. 10 μL bis(trimethylsilyl) sulfide (TMS₂S, E102) are then injected (E103). After hour of reaction (E104), the slide is rinsed twice with chloroform, then twice with ethanol. It is then possible to deposit a monolayer of cadmium to form a film of CdS. For this, the glass side covered with thicker sheets (E105) is immersed (E103) in a 0.1 M solution of Cd(acetate)₂(H₂O)₂ (E102) in ethanol and is allowed to react for one hours (E104). After two washes with ethanol, the glass slide is thus covered with a layer of CdSe/CdS sheets (E106). The final structure of sheets obtained on substrate is shown schematically in FIG. 4, where A0 is the CdSe and A1 is the CdS.

As obvious and as already resulting from the foregoing, the invention is in no way limited to those modes of applications and achievements that have been especially considered, it encompasses all variants without departing from the scope of the invention as defined by the claims.

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1-17. (canceled)
 18. An inorganic colloidal nanoparticle comprising an initial inorganic nanosheet partially or totally covered with at least one monolayer of inorganic material.
 19. The particle according to claim 18, having a thickness of 0.5 nm to 10 mm.
 20. The particle according to claim 18, whose lateral dimensions are at least 1.5 times its thickness.
 21. The particle according to claim 18, wherein the material composing the initial sheet comprise a material MxEy, wherein M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture thereof, E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof, and x and y are independently a decimal number from 0 to
 5. 22. The particle according to claim 18, wherein the initial nanosheet is partially or totally covered by a monolayer of a material M or E wherein M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture thereof, and E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof.
 23. The particle according to claim 18, wherein the initial nanosheet is partially or totally covered by at least two monolayers, where the monolayers are alternatively composed of M then E or conversely, wherein M is Zn, Cd, Hg, Cu, Ag, Au, Ni, Pd, Pt, Co, Fe, Ru, Os, Mn, Tc, Re, Cr, Mo, W, V, Nd, Ta, Ti, Zr, Hf, Be, Mg, Ca, Sr, Ba, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, Sb, Bi, Sc, Y, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, or a mixture thereof, and E is O, S, Se, Te, N, P, As, F, Cl, Br, I, or a mixture thereof.
 24. A process of growth in the thickness of an inorganic colloidal nanosheet by deposition of at least one element R on at least one face of at least one inorganic colloidal nanosheet, the process comprises the following steps: (1) contacting at least one inorganic nanosheet with a precursor of the element R to deposit, this precursor being at a positive degree of oxidation if the nanosheet has a negative surface charge and at a negative degree of oxidation is the nanosheet has a positive surface charge. (2) waiting for a time t that the precursor of R has reacted with atoms at the surface of one or several nanosheets.
 25. The process according to claim 24, wherein the precursor of the element R is a precursor of M or E in function of the composition of the initial nanosheet.
 26. The process according to claim 24, wherein the two previous steps (1) and (2) are implemented n times where n is an integer greater or equal to
 1. 27. The process according to claim 24, wherein the element R is successively changed at each implementation of the process according to the composition of the previous monolayer.
 28. The process according to claim 24, wherein is deposited on the surface of at least one initial nanosheet, a cationic monolayer (M) then an anionic monolayer (E) or conversely, thereby forming a bilayer consisting of MxEy composed by the element M and E.
 29. The process according to claim 24, wherein the at least one initial nanosheet can be fixed on a substrate.
 30. A product comprising at least one particle according to claim 18, wherein the product is a luminescent system or an electroluminescent system or an amplifying stage of a laser, or a catalyst or a photovoltaic cell or a transistor.
 31. A product comprising at least one particle obtained by the process according to claim 24, wherein the product is a luminescent system or an electroluminescent system or an amplifying stage of a laser, or a catalyst or a photovoltaic cell or a transistor. 